Product Description

Silicon Carbide (SiC) substrates have high resistivity and are mainly used for GaN heteroepitaxy. RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power RF output of GaN in the high-frequency range, and are widely applied in the new generation communication field such as 5G stations. Silicon carbide wafer manufacturers like JXT play a crucial role in supplying these substrates for such applications.